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| 2SK2614 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L --MOSV) 2 2SK2614 Chopper Regulator, DC/DC Converter and Motor Drive Applications 4 V gate drive Low drain-source ON-resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 0.032 (typ.) : |Yfs| = 13S (typ.) Unit: mm : IDSS = 100 A (max) (VDS = 50 V) : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD Tch Tstg Rating 50 50 20 20 50 40 150 -55~150 Unit V V V A A W C C Pulse (Note 1) Drain power dissipation (Tc = 25C) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA SC-64 2-7B5B Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Weight: 0.36 g (typ.) Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.125 125 Unit C / W C / W This transistor is an electrostatic-sensitive device. Handle with care. JEDEC JEITA TOSHIBA 2-7B7B Weight: 0.36 g (typ.) 1 2006-11-17 2SK2614 Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf VGS 10 V 0V 4.7 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 50 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VDS = 4 V, ID = 5 A VDS = 10 V, ID = 10 A VDS = 10 V, ID = 10 A Min -- -- 50 0.8 -- -- 7 -- -- -- -- OUT -- 25 -- ns -- 30 -- Typ. -- -- -- -- 0.055 0.032 13 900 130 370 15 Max 10 100 -- 2.0 0.08 0.046 -- -- -- -- -- pF Unit A A V V S ID = 10 A RL = 3 Turn-on time Switching time Fall time VDD 30 V Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("Miller") charge toff -- Duty 1%, tw = 10 s -- VDD 40 V, VGS = 10 V, ID = 20 A -- -- 25 19 6 -- -- -- nC 100 -- Qg Qgs Qgd Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition -- -- IDR = 20 A, VGS = 0 V IDR = 20 A, VGS = 0 V, dIDR / dt = 50 A / s Min -- -- -- -- -- Typ. -- -- -- 60 45 Max 20 50 -1.7 -- -- Unit A A V ns C Marking K2614 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-17 2SK2614 ID - VDS 20 Common source Tc = 25C Pulse test 50 8 10 15 6 5 40 10 15 8 6 ID - VDS Common source Tc = 25C Pulse test 5 16 (A) ID 12 3.5 ID (A) 30 4 4.5 Drain current Drain current 8 VGS = 3 V 4 20 4 3.5 10 VGS = 3 V 0 0 0.2 0.4 0.6 0.8 1.0 0 0 2 4 6 8 10 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 50 Common source 40 VDS = 10 V Pulse test 25 30 Tc = -55C 100 2.0 VDS - VGS Common source Tc = 25C Pulse test (V) VDS Drain-source voltage 1.6 ID (A) 1.2 ID = 25 A Drain current 20 0.8 10 0.4 12 6 0 0 2 4 6 8 10 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 100 Common source VDS = 10 V 50 Pulse test 0.5 1 Common source Tc = 25C Pulse test RDS (ON) - ID Forward transfer admittance Yfs (S) 30 Tc = -55C 25 100 10 Drain-source ON-resistance 0.3 () 0.1 RDS (ON) VGS = 4 V 10 5 3 0.05 0.03 1 1 3 5 10 30 50 100 0.01 1 3 5 10 30 50 100 Drain current ID (A) Drain current ID (A) 3 2006-11-17 2SK2614 RDS (ON) - Ta 0.20 Common source Pulse test 100 Common source Tc = 25C Pulse test IDR - VDS Drain-source ON-resistance RDS (ON) () 0.16 Drain reverse current IDR (A) 50 30 0.12 10 10 5 3 5 3 VGS = 0, -1 V 1 ID = 12 A 6 0.08 VGS = 4 V 0.04 VGS = 10 V 0 -80 -40 0 40 80 ID = 25 A 6 12 120 160 1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 5000 3000 1.6 2.0 Vth - Tc (pF) 500 Gate threshold voltage Vth (V) 1000 Ciss Capacitance C 1.2 300 Coss 100 50 Common source V =0V 30 GS f = 1 MHz Ta = 25C 10 0.1 0.3 1 3 10 0.8 Crss 0.4 30 100 0 -80 Common source VDS = 10 V ID = 1 mA Pulse test -40 0 40 80 120 160 Drain-source voltage VDS (V) Ambient temperature Ta (C) PD - Ta 50 50 Dynamic input / output characteristics 20 (V) 40 40 16 Drain power dissipation PD (W) Drain-source voltage Common source ID = 20 A VDD = 40 V Ta = 25C Pulse test 4 8 VGS 20 20 10 10 0 0 40 80 120 160 200 0 0 10 20 30 40 0 50 Ambient temperature Ta (C) Total gate charge Qg (nC) 4 2006-11-17 Gate-source voltage 30 30 VDS 20 10 12 VGS (V) VDS 2SK2614 Normalized transient thermal impedance rth (t)/Rth (ch-a) SINGLE PULSE Pulse width tw (S) SAFE OPERATING AREA 300 100 (A) 50 ID max (pulse)* 100 s* 30 ID max (continuous) 1 ms* 10 5 3 DC OPERATION Ta =25C Drain current ID 1 0.5 0.3 * Single pulse Ta=25C Curves must be derated linearly with increase in temperature. VDSS max 10 30 100 300 0.1 0.3 1 3 Drain-source voltage VDS (V) 5 2006-11-17 2SK2614 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-17 |
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